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IRFRU5410 Datasheet(PDF) 1 Page - International Rectifier |
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IRFRU5410 Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page IRFR/U5410 HEXFET® Power MOSFET VDSS = -100V RDS(on) = 0.205W ID = -13A 5/3/99 Parameter Typ. Max. Units RqJC Junction-to-Case 1.9 RqJA Junction-to-Ambient (PCB mount)** 50 °C/W RqJA Junction-to-Ambient 110 Thermal Resistance D-Pak TO-252AA I-Pak TO-251AA l Ultra Low On-Resistance l P-Channel l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -13 ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.2 A IDM Pulsed Drain Current -52 PD @TC = 25°C Power Dissipation 66 W Linear Derating Factor 0.53 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 194 mJ IAR Avalanche Current -8.4 A EAR Repetitive Avalanche Energy 6.3 mJ dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. S D G PD - 9.1533A www.irf.com 1 |
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