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IRFV260 Datasheet(PDF) 1 Page - International Rectifier

Part # IRFV260
Description  TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFV260 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
IRFV260
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
45*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
29
IDM
Pulsed Drain Current

180
PD @ TC = 25°C
Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/K
…
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
‚
700
m J
IAR
Avalanche Current

45
A
EAR
Repetitive Avalanche Energy

30
m J
dv/dt
Peak Diode Recovery dv/dt
ƒ
4.3
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight
10.9 (typical)
g
N-CHANNEL
Provisional Data Sheet No. PD-9.2002
200Volt, 0.060
Ω, HEXFET
A
IRFV260
HEXFET® TRANSISTOR
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry design achieves ver y
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRFV260
200V
0.060
45A*
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
* ID current limited by pin diameter
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