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IRFV260 Datasheet(PDF) 1 Page - International Rectifier |
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IRFV260 Datasheet(HTML) 1 Page - International Rectifier |
1 / 4 page Absolute Maximum Ratings Parameter IRFV260 Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 45* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 29 IDM Pulsed Drain Current 180 PD @ TC = 25°C Max. Power Dissipation 300 W Linear Derating Factor 2.4 W/K VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 700 m J IAR Avalanche Current 45 A EAR Repetitive Avalanche Energy 30 m J dv/dt Peak Diode Recovery dv/dt 4.3 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range oC Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.) Weight 10.9 (typical) g N-CHANNEL Provisional Data Sheet No. PD-9.2002 200Volt, 0.060 Ω Ω Ω Ω Ω, HEXFET A IRFV260 HEXFET® TRANSISTOR HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis- tors. The efficient geometry design achieves ver y low on-state resistance combined with high trans- conductance. HEXFET transistors also feature all of the well-es- tablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary Part Number BVDSS RDS(on) ID IRFV260 200V 0.060 Ω 45A* Features: n Hermetically Sealed n Electrically Isolated n Simple Drive Requirements n Ease of Paralleling n Ceramic Eyelets * ID current limited by pin diameter Next Data Sheet Index Previous Datasheet To Order |
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