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SMG2302N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG2302N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 11-Feb-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 0.7 0.8 1.2 V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - 100 nA VDS=0, VGS=8V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS=16V, VGS=0 - - 10 VDS=20V, VGS= 0, TJ= 55°C On-State Drain Current 1 ID(on) 7 - - A VDS=5V, VGS=4.5V Drain-Source On-Resistance 1 RDS(ON) - - 76 mΩ VGS=4.5V, ID=3.4A - - 103 VGS=2.5V, ID=2.9A Forward Transconductance 1 gfs - 7 - S VDS=5V, ID=1.5A Diode Forward Voltage VSD - 0.7 - V IS=1.6A, VGS=0 Dynamic 2 Total Gate Charge Qg - 3.5 - nC VDS=10V, VGS=4.5V, ID=3.4A Gate-Source Charge Qgs - 0.55 - Gate-Drain Charge Qgd - 0.95 - Input Capacitance Ciss - 815 - pF VDS=15V, VGS=0, f=1MHz Output Capacitance Coss - 175 - Reverse Transfer Capacitance Crss - 106 - Turn-on Delay Time Td(on) - 5 - nS VDD=10V, VGEN=4.5V, RL=6, RG=6 Rise Time Tr - 8 - Turn-off Delay Time Td(off) - 11 - Fall Time Tf - 3 - Notes: 1 Pulse test:PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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