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IRFU220N Datasheet(PDF) 1 Page - International Rectifier |
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IRFU220N Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 11/29/00 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mΩ) ID 200V 600 5.0A Typical SMPS Topologies l Telecom 48V input Forward Converters Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.5 A IDM Pulsed Drain Current 20 PD @TC = 25°C Power Dissipation 43 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 7.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings PD- 94048 Notes through
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