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RJK0332DPB-01 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0332DPB-01
Description  Silicon N Channel Power MOS FET
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0332DPB-01 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK0332DPB-01
Preliminary
R07DS0268EJ0500 Rev.5.00
Page 3 of 6
Mar 01, 2011
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
VGS = 2.6 V
Pulse Test
10
3
1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
100
30
VGS = 4.5 V
10 V
2.8 V
3.0 V
10 V
3.2 V
4.5 V
Pulse Test
5 A
Case Temperature
Tc (°C)
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
1 ms
10
μs
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse


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