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NP50P04SLG Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NP50P04SLG
Description  MOS FIELD EFFECT TRANSISTOR
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP50P04SLG Datasheet(HTML) 5 Page - Renesas Technology Corp

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NP50P04SLG
Chapter Title
R07DS0241EJ0100 Rev.1.00
Page 5 of 6
Feb 09, 2011
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
-75
-25
25
75
125
175
ID =
−25 A
Pulsed
−10 V
VGS =
−4.5 V
Tch - Channel Temperature -
°C
0.10
1.00
10.00
-0.01
-0.1
-1
-10
-100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
1000
-0.01
-0.1
-1
-10
-100
VDD =
−20 V
VGS =
−10 V
RG = 0 Ω
td(off)
tf
td(on)
tr
ID - Drain Current - A
0
-5
-10
-15
-20
-25
-30
-35
0
10203040 5060708090 100
0
-5
-10
-15
−20 V
−8 V
VDS
VDD =
−32 V
ID =
−50 A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-0.0001
-0.001
-0.01
-0.1
-1
-10
-100
-1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pulsed
0 V
VGS =
−10 V
−4.5 V
−5.0 V
VF(S-D) - Source to Drain Voltage - V
1
10
100
1000
-0.1
-1
-10
-100
VGS = 0 V
di/dt =
−100 A/μs
IF - Diode Forward Current - A


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