μ PA1932TE

Chapter Title

R07DS0001EJ0100 Rev.1.00

Page 2 of 5

May 31, 2010

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the

rated voltage may be applied to this device.

Caution for Electrostatic Discharge

This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution

Ω, Single pulse)

°C)

Item

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Zero Gate Voltage Drain Current

−1

Gate Leakage Current

m10

Gate to Source Cut-off Voltage

−1.0

−1.6

−2.5

V

Forward Transfer Admittance

Note

2.5

5.0

S

30

38

m

Ω

Drain to Source On-state Resistance

Note

36

59

m

Ω

Input Capacitance

950

pF

Output Capacitance

210

pF

Reverse Transfer Capacitance

170

pF

−10 V

f = 1.0 MHz

Turn-on Delay Time

11

ns

Rise Time

10

ns

Turn-off Delay Time

73

ns

Fall Time

30

ns

−10 V,

Ω

Total Gate Charge

20

nC

Gate to Source Charge

2

nC

Gate to Drain Charge

6

nC

−24 V,

−10 V,

−6.0 A

Body Diode Forward Voltage

Note

0.9

V

Reverse Recovery Time

36

ns

Reverse Recovery Charge

23

nC

di/dt =

−100A/μ s

Note: Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

Ω

50

Ω

L

−20 → 0 V

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

0

D.U.T.

τ = 1 s

μ

Duty Cycle

≤ 1%

Wave Form

Wave Form

10%

90%

10%

0

90%

90%

10%

τ

0

PG.

PG.

50

Ω

D.U.T.

−2 mA

−