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FYQ-2841NX-30 Datasheet(PDF) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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FYQ-2841NX-30 Datasheet(HTML) 4 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
4 / 5 page Model No. Rev. Min 5 — — — -40 -40 ■ ■ ■ ■ Electrical-Optical Characteristics ● Color Code & Chip Characteristics:(Test Condition:IF=20mA) Typ H Red 90nm 2.00 S Hi Red 20nm 1.80 D Super Red 20nm 1.90 E Orange 35nm 1.90 A Amber 35nm 1.90 Y Yellow 35nm 1.90 G Green 10nm 1.90 3.40 2.80 2.80 PG Pure Green 36nm 2.80 W White CCT:9500K 2.80 UHR Ultra Hi Red 20nm 1.90 UR Ultra Red 20nm 1.90 UE Ultra Orange 20nm 1.90 UA Ultra Amber AlGaInP 20nm 1.90 2.50 UY Ultra Yellow AlGaInP 20nm 1.90 2.50 UG Ultra Green AlGaInP 30nm 1.90 2.50 PG Ultra Pure Green InGaN 36nm 2.80 3.80 BG Ultra Bluish Green InGaN 36nm 2.80 3.80 30nm 2.80 30nm 2.80 UW Ultra White CCT:9500K 2.80 Note: 1.Luminous Intensity is based on the Foryard standards. 2.Pay attention about static for InGaN Page: 4/5 ■ ■ ■ ■ Absolute maximum ratings Model No.: : : :FYQ-2841M/NX-XX Pulse Current Ipeak Duty=0.1mS,1KHz Forward Current IF — Power Dissipation 100 V — Pd mW 700nm GaP 2.50 Spectral Line halfwidth(∆ λ1/2) 1 Emitting Color 625nm Max Dice Material — 30 +85 Symbol Parameter Value Operating Temperature 2.50 Standard brightness Forward Voltage(VF) Unit:V Peak Wave Length(λP) GaAsP AlGaAs/DH 650nm B AlGaAs/SH 660nm 570nm 2.50 590nm 610nm GaP 13~18 14~18 15~20 14~20 26~38 GaAsP GaAsP 13~18 2.50 2.50 520nm 40~100~150 AlGaInP 3.80 3.80 2.50 InGaN X=0.29,Y=0.30 AlGaInP 640nm 30~60 Blue InGaN Ultra brightness 430nm 3.80 60nm 3.80 460nm 520nm 4.40 InGaN Ultra Blue InGaN X=0.29,Y=0.30 InGaN UB 460nm 3.80 Http://www.foryard.com 470nm Segment-to-Segment Luminous Intensity ratio(Iv-M) 1.5:1 80~90~120 3.80 180~200 3.80 ℃ Tstr 505nm 625nm — 2.50 Storage Temperature Luminous Intensity (Iv) Unit:mcd 635nm 590nm AlGaInP 2.50 2.50 0.7~1(mw) 610nm 6~12(mw) 4~6(mw) 470nm 80~90~120 260~310 60~120 +85 (Ta=25℃) FYQ-2841M/NX-XX A mA 150 ℃ 260~310 60~100 50~140~190 30~60~80 — Reverse Voltage VR IR=30 Topr 2.50 Unit Max (Ta=25℃) 570nm 20-30 6~12(mw) Test Condition mA |
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