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IRFB260N Datasheet(PDF) 2 Page - International Rectifier |
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IRFB260N Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFB260N 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 29 ––– ––– SVDS = 50V, ID = 34A Qg Total Gate Charge ––– 150 220 ID = 34A Qgs Gate-to-Source Charge ––– 24 37 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 67 100 VGS = 10V td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V tr Rise Time ––– 64 ––– ID = 34A td(off) Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω tf Fall Time ––– 50 ––– VGS = 10V Ciss Input Capacitance ––– 4220 ––– VGS = 0V Coss Output Capacitance ––– 580 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 5080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 500 ––– VGS = 0V, VDS = 0V to 160V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 450 mJ IAR Avalanche Current ––– 34 A EAR Repetitive Avalanche Energy ––– 38 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 34A Qrr Reverse RecoveryCharge ––– 2.1 3.2 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 56 220 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 34A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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