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KSM11P06 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KSM11P06 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 6 page  KSM11P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. Features • -11.4A, -60V, RDS(on) = 0.175Ω @VGS = -10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 45 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSM11P06 Units VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -11.4 A - Continuous (TC = 100°C) -8.05 A IDM Drain Current - Pulsed (Note 1) -45.6 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ IAR Avalanche Current (Note 1) -11.4 A EAR Repetitive Avalanche Energy (Note 1) 5.3 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TC = 25°C) 53 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.85 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ▶ ▶ ▶ ▶ ! ! ! ! ! ! ! ! ! ! ! ! S D G TO-220 2014-6-25 www.kersemi.com 1 |
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