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IRF7811W Datasheet(PDF) 1 Page - International Rectifier |
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IRF7811W Datasheet(HTML) 1 Page - International Rectifier |
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1 / 6 page  Parameter Symbol IRF7811W Units Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 Continuous Drain or Source T A = 25°C I D 14 Current (V GS ≥ 4.5V) T L = 90°C 13 A Pulsed Drain Current I DM 109 Power Dissipation T A = 25°C P D 3.1 W T L = 90°C 3.0 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 3.8 A Pulsed Source Current I SM 109 Absolute Maximum Ratings Parameter Max. Units Maximum Junction-to-Ambient R θJA 40 °C/W Maximum Junction-to-Lead R θJL 20 °C/W Thermal Resistance PD-94031A IRF7811W 3/13/01 IRF7811W R DS(on) 9.0m Ω Q G 18nC Q sw 5.5nC Q oss 12nC DEVICE CHARACTERISTICS To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S SO-8 HEXFET® Power MOSFET for DC-DC Converters • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low R DS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. |
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Similar Description - IRF7811W |
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