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IRF7811W Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF7811W
Description  Power MOSFET for DC-DC Converters
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 1 page
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Parameter
Symbol
IRF7811W
Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±12
Continuous Drain or Source
T
A = 25°C
I
D
14
Current (V
GS ≥ 4.5V)
T
L = 90°C
13
A
Pulsed Drain Current

I
DM
109
Power Dissipation
T
A = 25°C
P
D
3.1
W
T
L = 90°C
3.0
Junction & Storage Temperature Range
T
J, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
I
S
3.8
A
Pulsed Source Current

I
SM
109
Absolute Maximum Ratings
Parameter
Max.
Units
Maximum Junction-to-Ambient
ƒ
R
θJA
40
°C/W
Maximum Junction-to-Lead
R
θJL
20
°C/W
Thermal Resistance
PD-94031A
IRF7811W
3/13/01
IRF7811W
R
DS(on)
9.0m
Q
G
18nC
Q
sw
5.5nC
Q
oss
12nC
DEVICE CHARACTERISTICS
…
To p V ie w
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
SO-8
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W offers particulary low R
DS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.




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