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IRF7807 Datasheet(PDF) 3 Page - International Rectifier

Part # IRF7807
Description  Chip-Set for DC-DC Converters
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7807 Datasheet(HTML) 3 Page - International Rectifier

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3
IRF7807/IRF7807A
Control FET
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the R
ds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
Power losses in the control switch Q1 are given by;
P
loss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
P
loss =
I
rms
2
× R
ds(on )
()
+ I ×
Q
gd
i
g
× V
in × f
 + I ×
Q
gs2
i
g
× V
in × f
+ Q
g × Vg × f
()
+
Q
oss
2
×V
in × f
This simplified loss equation includes the terms Q
gs2
and Q
oss which are new to Power MOSFET data sheets.
Q
gs2 is a sub element of traditional gate-source charge
that is included in all MOSFET data sheets. The impor-
tance of splitting this gate-source charge into two sub
elements, Q
gs1 and Qgs2, can be seen from Fig 1.
Q
gs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold volt-
age has been reached (t1) and the time the drain cur-
rent rises to I
dmax (t2) at which time the drain voltage
begins to change. Minimizing Q
gs2 is a critical factor in
reducing switching losses in Q1.
Q
oss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Q
oss is formed by the paral-
lel combination of the voltage dependant (non-linear)
capacitance’s C
ds and Cdg when multiplied by the power
supply input buss voltage.
Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss = Pconduction + Pdrive + Poutput
*
P
loss =
I
rms
2 × R
ds(on)
()
+ Q
g × Vg × f
()
+
Q
oss
2
×V
in × f
+ Q
rr × Vin × f
(
)
*dissipated primarily in Q1.
Power MOSFET Selection for DC/DC
Converters
4
1
2
Drain Current
Gate Voltage
Drain Voltage
t3
t2
t1
V
GTH
t0


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