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IRF7521D1 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7521D1 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7521D1 2 www.irf.com 2 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ––– 0.085 0.135 VGS = 4.5V, ID = 1.7A ––– 0.12 0.20 VGS = 2.7V, ID = 0.85A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 5.3 8.0 ID = 1.7A Qgs Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 5.7 ––– VDD = 10V tr Rise Time ––– 24 ––– ID = 1.7A td(off) Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω tf Fall Time ––– 16 ––– RD = 5.7Ω, Ciss Input Capacitance ––– 260 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– 1.3 ISM Pulsed Source Current (Body Diode) ––– ––– 14 VSD Body Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 39 59 ns TJ = 25°C, IF = 1.7A Qrr Reverse RecoveryCharge ––– 37 56 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units. Conditions IF(av) Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C 1.4 Fig.14 TA = 70°C ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition & with V RRM applied A A Schottky Diode Maximum Ratings Parameter Max. Units Conditions VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C 0.62 IF = 2.0A, TJ = 25°C 0.39 IF = 1.0A, TJ = 125°C 0.57 IF = 2.0A, TJ = 125°C . IRM Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C 8 TJ = 125°C Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR Schottky Diode Electrical Specifications V mA (HEXFET is the reg. TM for International Rectifier Power MOSFET's ) See |
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