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NP109N055PUJ-E1B-AYNote Datasheet(PDF) 3 Page - Renesas Technology Corp |
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NP109N055PUJ-E1B-AYNote Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP109N055PUJ SWITCHING N-CHANNEL POWER MOS FET DATA SHEET 2009 Document No. D19729EJ1V0DS00 (1st edition) Date Published April 2009 NS Printed in Japan DESCRIPTION The NP109N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP109N055PUJ-E1B-AY Note NP109N055PUJ-E2B-AY Note Pure Sn (Tin) Tape 1000 p/reel TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on) = 3.2 m Ω MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive application and AEC-Q101 qualified ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 55 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25 °C) ID(DC) ±110 A Drain Current (pulse) Note1 ID(pulse) ±440 A Total Power Dissipation (TC = 25 °C) PT1 220 W Total Power Dissipation (TA = 25 °C) PT2 1.8 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Single Avalanche Energy Note2 EAS 291 mJ Repetitive Avalanche Current Note3 IAR 54 A Repetitive Avalanche Energy Note3 EAR 291 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25 °C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch ≤ 150 °C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W (TO-263) |
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