KSMD3N50C datasheet(3/8 Pages) KERSEMI

Part #	KSMD3N50C

Description	500V N-Channel MOSFET

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Manufacturer	KERSEMI [Kersemi Electronic Co., Ltd.]

Direct Link	http://www.kersemi.com

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3 / 8 page

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

Notes :

1. 250µs Pulse Test

2. T

C = 25°C

V

DS, Drain-Source Voltage [V]

24

68

10

-1

10

0

10

1

Note

1. V

DS = 40V

2. 250µs Pulse Test

-55°C

150°C

25°C

V

GS , Gate-Source Voltage [V]

0246

8

10

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

V

GS = 20V

V

GS = 10V

Note : T

J = 25°C

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

150°C

Notes :

1. V

GS = 0V

2. 250µs Pulse Test

25°C

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

200

400

600

C

iss

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

V

DS, Drain-Source Voltage [V]

05

10

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

Note : I

D = 3A

Q

G, Total Gate Charge [nC]

KSMD3N50C/KSMU3N50C

2014-7-30

3

www.kersemi.com

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