NP82N06PDG-E2-AYNote datasheet(3/10 Pages) RENESAS

Part #	NP82N06PDG-E2-AYNote

Description	SWITCHING N-CHANNEL POWER MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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MOS FIELD EFFECT TRANSISTOR

NP82N06PDG

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D18227EJ1V0DS00 (1st edition)

Date Published June 2006 NS CP(K)

Printed in Japan

2006

DESCRIPTION

The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP82N06PDG-E1-AY

Note

NP82N06PDG-E2-AY

Note

Pure Sn (Tin)

Tape

800 p/reel

TO-263 (MP-25ZP)

typ. 1.5 g

Note See “TAPE INFORMATION”

FEATURES

• Super low on-state resistance

RDS(on)1 = 6.7 m

Ω MAX. (VGS = 10 V, ID = 41 A)

RDS(on)2 = 8.5 m

Ω MAX. (VGS = 5 V, ID = 41 A)

• Low Ciss

Ciss = 5700 pF TYP.

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

60

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±82

A

Drain Current (pulse)

Note1

ID(pulse)

±270

A

Total Power Dissipation (TC = 25

°C)

PT1

143

W

Total Power Dissipation (TA = 25

°C)

PT2

1.8

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Repetitive Avalanche Current

Note2

IAR

37

A

Repetitive Avalanche Energy

Note2

EAR

137

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Tch

≤ 150°C, VDD = 30 V, RG = 25

Ω, VGS = 20 → 0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

1.05

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

83.3

°C/W

(TO-263)

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NP82N06PDG-E2-AYNote Datasheet(PDF) 3 Page - Renesas Technology Corp

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