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NP80N055PDG-E1B-AYNote Datasheet(PDF) 5 Page - Renesas Technology Corp |
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NP80N055PDG-E1B-AYNote Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 12 page  Data Sheet D19796EJ1V0DS 3 NP80N055MDG, NP80N055NDG, NP80N055PDG ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.4 2.5 V Forward Transfer Admittance Note | yfs | VDS = 5 V, ID = 35 A 25 64 S Drain to Source On-state Resistance Note VGS = 10 V, ID = 40 A NP80N055MDG, NP80N055NDG 5.4 6.9 m Ω RDS(on)1 VGS = 10 V, ID = 40 A NP80N055PDG 4.8 6.6 m Ω VGS = 4.5 V, ID = 35 A NP80N055MDG, NP80N055NDG 6.3 11.2 m Ω RDS(on)2 VGS = 4.5 V, ID = 35 A NP80N055PDG 5.9 10.9 m Ω Input Capacitance Ciss VDS = 25 V, 4600 6900 pF Output Capacitance Coss VGS = 0 V, 390 590 pF Reverse Transfer Capacitance Crss f = 1 MHz 240 430 pF Turn-on Delay Time td(on) VDD = 28 V, ID = 40 A, 17 37 ns Rise Time tr VGS = 10 V, 13 33 ns Turn-off Delay Time td(off) RG = 0 Ω 77 154 ns Fall Time tf 7 18 ns Total Gate Charge QG VDD = 44 V, 90 135 nC Gate to Source Charge QGS VGS = 10 V, 13 nC Gate to Drain Charge QGD ID = 80 A 26 nC Body Diode Forward Voltage Note VF(S-D) IF = 80 A, VGS = 0 V 0.95 1.5 V Reverse Recovery Time trr IF = 80 A, VGS = 0 V, 38 ns Reverse Recovery Charge Qrr di/dt = 100 A/ μs 45 nC Note Pulsed test TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS 0 τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 0 0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ |
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