Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

KSM032N08

KSM032N08

TO-220

-

-

50

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

-

-

V

∆BV

DSS

∆T

J

Breakdown Voltage Temperature

Coefficient

-

0.05

-

Zero Gate Voltage Drain Current

-

-

1

µA

-

-

500

Gate to Body Leakage Current

-

-

±100

nA

Gate Threshold Voltage

3.5

4.5

V

Static Drain to Source On Resistance

-

2.5

3.2

m

Ω

Forward Transconductance

(Note 4)

-

180

-

S

Input Capacitance

f = 1MHz

-

11400

15160

pF

Output Capacitance

-

1360

1810

pF

Reverse Transfer Capacitance

-

595

800

pF

Total Gate Charge at 10V

(Note 4, 5)

-

169

220

nC

Gate to Source Gate Charge

-

60

-

nC

Gate to Drain “Miller” Charge

-

47

-

nC

Turn-On Delay Time

(Note 4, 5)

-

230

470

ns

Turn-On Rise Time

-

191

392

ns

Turn-Off Delay Time

-

335

680

ns

Turn-Off Fall Time

-

121

252

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

235

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

940

A

Drain to Source Diode Forward Voltage

-

-

1.3

V

Reverse Recovery Time

(Note 4)

-53

-

ns

Reverse Recovery Charge

-

77

-

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Package Marking and Ordering Information

KSM032N08

2014-7-2

2

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