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NP36P06KDG-E1-AYNote Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # NP36P06KDG-E1-AYNote
Description  SWITCHING P-CHANNEL POWER MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP36P06KDG-E1-AYNote Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D18687EJ3V0DS
4
NP36P06KDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
-20
-40
-60
-80
-100
-120
0
-1
-2-3
-4-5
-6-7
VGS =
−10 V
Pulsed
−4.5 V
VDS - Drain to Source Voltage - V
-0.001
-0.01
-0.1
-1
-10
-100
-1000
0
-1-2
-3-4
-5
VDS =
−10 V
Pulsed
Tch =
−55°C
−25°C
25
°C
75
°C
125
°C
150
°C
175
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
-0.5
-1
-1.5
-2
-2.5
-3
-75
-25
25
75
125
175
225
VDS =
−10 V
ID =
−1 mA
Tch - Channel Temperature -
°C
0.1
1
10
100
-0.1
-1
-10
-100
VDS =
−10 V
Pulsed
Tch =
−55°C
−25°C
25
°C
75
°C
125
°C
150
°C
175
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
10
20
30
40
50
60
-1
-10
-100
-1000
−10 V
Pulsed
VGS =
−4.5 V
ID - Drain Current - A
0
10
20
30
40
50
60
70
80
0
-5
-10
-15
-20
Pulsed
ID =
−36 A
−18 A
−8 A
VGS - Gate to Source Voltage - V


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