HD1_15 datasheet(4/8 Pages) RENESAS

Part #	HD1

Description	ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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2

HD1 SERIES

Data Sheet D16182EJ4V0DS

HD1A3M

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

100

nA

DC current gain

hFE1

Note

VCE = 2.0 V, IC = 0.1 A

80

−

DC current gain

hFE2

Note

VCE = 2.0 V, IC = 0.5 A

200

−

DC current gain

hFE3

Note

VCE = 2.0 V, IC = 1.0 A

200

−

Low level output voltage

VOL

Note

VIN = 5.0 V, IC = 0.4 A

0.35

V

Low level input voltage

VIL

Note

VCE = 5.0 V, IC = 100

μA

0.3

V

Input resistance

R1

0.7

1.0

1.3

k

Ω

E-to-B resistance

R2

0.7

1.0

1.3

k

Ω

Note

PW

≤ 350

μs, duty cycle ≤ 2 %

HD1F3P

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

100

nA

DC current gain

hFE1

Note

VCE = 2.0 V, IC = 0.1 A

200

630

−

DC current gain

hFE2

Note

VCE = 2.0 V, IC = 0.5 A

300

780

−

DC current gain

hFE3

Note

VCE = 2.0 V, IC = 1.0 A

200

430

−

Low level output voltage

VOL

Note

VIN = 5.0 V, IC = 0.3 A

0.12

0.3

V

Low level input voltage

VIL

Note

VCE = 5.0 V, IC = 100

μA

0.5

0.3

V

Input resistance

R1

1.54

2.2

2.86

k

Ω

E-to-B resistance

R2

7

10

13

k

Ω

Note

PW

≤ 350

μs, duty cycle ≤ 2 %

HD1L3N

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

100

nA

DC current gain

hFE1

Note

VCE = 2.0 V, IC = 0.1 A

200

−

DC current gain

hFE2

Note

VCE = 2.0 V, IC = 0.5 A

300

−

DC current gain

hFE3

Note

VCE = 2.0 V, IC = 1.0 A

200

−

Low level output voltage

VOL

Note

VIN = 5.0 V, IC = 0.2 A

0.2

V

Low level input voltage

VIL

Note

VCE = 5.0 V, IC = 100

μA

0.3

V

Input resistance

R1

3.29

4.7

6.11

k

Ω

E-to-B resistance

R2

7

10

13

k

Ω

Note

PW

≤ 350

μs, duty cycle ≤ 2 %

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