JANTXV2N6770 datasheet(1/7 Pages) IRF

Part #	JANTXV2N6770

Description	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

Download	7 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

Logo

1 / 7 page

Absolute Maximum Ratings

Parameter

Units

ID @ VGS =0V, TC = 25°C

Continuous Drain Current

1 2

ID @ VGS = 0V, TC = 100°C

Continuous Drain Current

7.75

IDM

Pulsed Drain Current ➀

48

PD @ TC = 25°C

Max. Power Dissipation

15 0

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

8.0

mJ

IAR

Avalanche Current ➀

12

A

EAR

Repetitive Avalanche Energy ➀

-mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5(typical)

g

PD - 90330F

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

o C

A

REPETITIVE AVALANCHE AND dv/dt RATED

IRF450

HEXFET



TRANSISTORS

JANTX2N6770

THRU-HOLE (TO-204AA/AE)

JANTXV2N6770

01/22/01

www.irf.com

1

TO-3

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF450

500V

0.400

Ω 12A

Features:

n Repetitive Avalanche Ratings

n Dynamic dv/dt Rating

n Hermetically Sealed

n Simple Drive Requirements

n Ease of Paralleling

For footnotes refer to the last page

500V, N-CHANNEL

Similar Part No. - JANTXV2N6770

Manufacturer	Part #	Datasheet	Description
International Rectifier	JANTXV2N6770	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)
Microsemi Corporation	JANTXV2N6770	1,006Kb / 9P	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

More results

Similar Description - JANTXV2N6770

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF430	146Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
	IRF460	140Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)
	IRF440	142Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)
	IRFI460	211Kb / 8P	TRANSISTOR N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21A)
	IRHM7450SE	122Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
	IRHN7450SE	111Kb / 4P	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
	JANTX2N6770	230Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)
	IRFN450	218Kb / 6P	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)
	IRF330	146Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=1.00ohm, Id=5.5A)
	IRF350	144Kb / 7P	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

More results

JANTXV2N6770 Datasheet(PDF) 1 Page - International Rectifier

JANTXV2N6770 Datasheet(HTML) 1 Page - International Rectifier

Similar Part No. - JANTXV2N6770

Similar Description - JANTXV2N6770

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL