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S8050 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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S8050 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual S8050 NPN Silicon Plastic-Encapsulate Transistors Complimentary to S8550 Collector Current: IC=0.5A FEATURES Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S G V 3 1 2 D Top View http://www.SeCoSGmbH.com Elektronische Bauelemente 1 2 3 01-Jun-200 7 Rev. A Page 1 of 2 MARKING: J3Y MAXIMUM RATINGS (TA=25 C O unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μ A Collector cut-off current ICEO VCB=20V , IE=0 0.1 μ A Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μ A HFE(1) VCE=1V, IC= 50mA 120 350 DC current gain HFE(2) VCE=1V, IC= 500mA 50 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V, IC= 20mA f=30MHz 150 MHz RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
Similar Part No. - S8050_15 |
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Similar Description - S8050_15 |
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