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2SK3814 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3814 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3814 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D16740EJ2V0DS00 (2nd edition) Date Published August 2006 NS CP(K) Printed in Japan 2004 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DESCRIPTION The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 8.7 m Ω MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 m Ω MAX. (VGS = 4.5 V, ID = 30 A) • Low Ciss: Ciss = 5450 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±60 A Drain Current (pulse) Note1 ID(pulse) ±240 A Total Power Dissipation (TC = 25°C) PT1 84 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Energy Note2 EAS 102 mJ Repetitive Avalanche Current Note3 IAR 32 A Repetitive Avalanche Energy Note3 EAR 102 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch(peak) ≤ 150°C, RG = 25 Ω ORDERING INFORMATION PART NUMBER PACKAGE 2SK3814 TO-251 (MP-3) 2SK3814-Z TO-252 (MP-3Z) (TO-251) (TO-252) |
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