2SJ557A_15 datasheet(5/8 Pages) RENESAS

Part #	2SJ557A

Description	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet D19059EJ2V0DS

3

2SJ557A

TYPICAL CHARACTERISTICS (TA = 25

°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

FORWARD BIAS SAFE OPERATING AREA

0

20

40

60

80

100

120

0

20

40

60

80 100 120 140 160

TA - Ambient Temperature -

°C

-0.01

-0.1

-1

-10

-100

-0.1

-1

-10

-100

ID(DC)

ID(pulse)

PW

= 1

i

00 μ

s

1

i

m

i

s

1

i

0 m

i

s

1

i

00

m

i

s

5 s

Pow

er

Dis

sip

atio

n L

im

ited

RD

S(o

n)

Lim

ited

(V

GS

= −

10

V)

TC = 25

°C

Single Pulse

Mounted on FR-4 board of

2500 mm

2 x 1.6 mm,

copper foil 100%, t

≤ 5 sec

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.1

1

10

100

1000

Mounted on FR-4 board of 2500 mm

2 x 1.6 mm,

copper foil 100%, t

≤ 5 sec

Single Pulse

Without board

PW - Pulse Width - s

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

-12

-10

-8

-6

-4

-2

0

-2

-1.5

-1

-0.5

0

Pulsed

VGS =

−10 V

−4.5 V

−4.0 V

VDS - Drain to Source Voltage - V

-0.0001

-0.001

-0.01

-0.1

-1

-10

0

-0.5

-1

-1.5

-2

-2.5

-3

-3.5

VDS =

−10 V

Pulsed

TA =

−25°C

25

°C

75

°C

125

°C

150

°C

VGS - Gate to Source Voltage - V

100

μ

1 m

10 m

100 m

1

10

100

1000

<R>

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