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NP88N04MHE-S18-AYNote1 Datasheet(PDF) 10 Page - Renesas Technology Corp |
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NP88N04MHE-S18-AYNote1 Datasheet(HTML) 10 Page - Renesas Technology Corp |
10 / 12 page Data Sheet D14236EJ8V0DS 8 NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE 5)TO-220 (MP-25K) 6)TO-262 (MP-25SK) 4 10.0 ± 0.2 3.8 ± 0.2 φ 4.45 ± 0.2 1.3 ± 0.2 0.8 ± 0.1 0.5 ± 0.2 2.5 ± 0.2 1.27 ± 0.2 12 3 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 4 12 3 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 0.8 ± 0.1 1.27 ± 0.2 0.5 ± 0.2 2.5 ± 0.2 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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