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H5N2522FP-E0-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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H5N2522FP-E0-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 6 page H5N2522FP-E0-E Preliminary R07DS0862EJ0100 Rev.1.00 Page 4 of 5 Jul 27, 2012 0 40 20 60 80100 1000 10000 100 10 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss Crss 00.4 0.8 1.21.6 2.0 50 20 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) 5 4 3 2 1 −25 0 50 100 150 25 125 75 0 Case Temperature Tc ( °C) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) VDS = 10 V 1 mA 10 0 30 40 ID = 10 mA VGS = 0 Ta = 25 °C Pulse Test 0.1 mA Ta = 25 °C 400 0 16 300 12 200 8 100 0 4 16 32 48 64 80 0 Gate Charge Qg (nC) Dynamic Input Characteristics (Typical) VDS VGS VDD = 200 V 100 V 50 V VDD = 200 V 100 V 50 V ID = 20 A Ta = 25 °C Vin Monitor D.U.T. Vin 10 V RL VDD = 120V tr td(on) Vin 90% 90% 10% 10% Vout td(off) Vout Monitor 10 Ω 90% 10% t f Switching Time Test Circuit Waveform |
Similar Part No. - H5N2522FP-E0-E_15 |
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Similar Description - H5N2522FP-E0-E_15 |
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