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IRFB4019 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFB4019 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page IRFB4019PBF Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low RDSON for Improved Efficiency • Low QG and QSW for Better THD and Improved Efficiency • Low QRR for Better THD and Lower EMI • 175°C Operating Junction Temperature for Ruggedness • Can Deliver up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. S D G TO-220AB Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Power Dissipation f W PD @TC = 100°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case f ––– 1.88 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient f ––– 62 Max. 12 51 ±20 150 17 80 40 0.5 10lb xin (1.1Nxm) -55 to + 175 300 VDS 150 V RDS(ON) typ. @ 10V 80 m : Qg typ. 13 nC Qsw typ. 5.1 nC RG(int) typ. 2.4 Ω TJ max 175 °C Key Parameters 2014-8-13 www.kersemi.com 1 |
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