IRFB4019PBF

Features

• Key Parameters Optimized for Class-D Audio

Amplifier Applications

Efficiency

• 175°C Operating Junction Temperature for

Ruggedness

• Can Deliver up to 200W per Channel into 8Ω Load in

Half-Bridge Configuration Amplifier

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

S

D

G

TO-220AB

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

f

W

Power Dissipation

f

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

f

–––

1.88

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

f

–––

62

Max.

12

51

±20

150

17

80

40

0.5

10lb

xin (1.1Nxm)

-55 to + 175

300

150

V

80

m

:

13

nC

5.1

nC

2.4

Ω

175

°C

Key Parameters

2014-8-13

www.kersemi.com

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