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MMBD318 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD318 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 3 page Elektronische Bauelemente MMBD318A / MMBD318C / MMBD318S 350V 225mA Surface Mount High Vitlage Switching Diode http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Dec-2010 Rev. B Page 2 of 3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR) 350 V IR=150μA 0.78 0.87 IF=20mA 0.93 1.0 IF =100mA Forward Voltage VF 1.03 1.25 mV IF =200mA 30 100 nA VR=240V Reverse Current IR 35 100 μA VR=240V Tj=150℃ Total capacitance CT 1.0 5.0 pF VR=0V,f=1MHz Reverse Recovery Time trr 50 ns IF=IR=30mA, Irr=0.1×IR,RL=100Ω |
Similar Part No. - MMBD318_15 |
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Similar Description - MMBD318_15 |
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