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2SC5752 Datasheet(PDF) 1 Page - California Eastern Labs |
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2SC5752 Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 17 page DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P15658EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) NPN SILICON RF TRANSISTOR NE67818 / 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification •PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form NE67818-A 2SC5752 -A 50 pcs (Non reel) • 8 mm wide embossed taping NE67818-T1-A 2SC5752-T1 -A 3 kpcs/reel • Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales offices. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 100 mA Total Power Dissipation Ptot Note 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology, avoid excessive static electricity, etc. JEITA Part No. |
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