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2SC5015 Datasheet(PDF) 4 Page - California Eastern Labs

Part # 2SC5015
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
Download  7 Pages
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5015 Datasheet(HTML) 4 Page - California Eastern Labs

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Data Sheet PU10403EJ01V0DS
4
2SC5015
VCE = 3 V
IC = 10 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
50
40
30
20
0
10
0.1
0.2
0.5
1
2
5
MAG
|S21e|2
VCE = 3 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
12
10
6
8
0
2
4
1
5
10
20
0
5
2
VCE = 3 V
f = 2 GHz
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
0
2
4
6
8
10
12
2
5
10
20
0
5
1
1 000
100
10
1
0
0
1
0
1
1
.
0
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
1 000
100
10
1
0
0
1
0
1
1
.
0
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
1 000
100
10
1
0
0
1
0
1
1
.
0
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
NE68518 /


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