DATA SHEET

SILICON TRANSISTOR

NE68139 / 2SC4094

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

DATA SHEET

Document No. P10366EJ1V1DS00 (1st edition)

Date Published March 1997 N

DESCRIPTION

The

NE68139 / 2SC4094 is an NPN epitaxial silicon transistor

designed for use in low-noise and small signal amplifiers from VHF band

to UHF band.

Low-noise figure, high gain, and high current capability

achieve a very wide dynamic range and excellent linearity.

This

achieved by direct nitride passivated

base

surface

process

(DNP

process) which is a proprietary new fabrication technique.

FEATURES

•

C)

Collector to Base Voltage

20

V

Collector to Emitter Voltage

10

V

Emitter to Base Voltage

1.5

V

Collector Current

65

mA

Total Power Dissipation

200

mW

Junction Temperature

150

C

Storage Temperature

65 to +150

C

C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cutoff Current

1.0

Emitter Cutoff Current

1.0

DC Current Gain

50

250

Gain Bandwidth Product

9

GHz

Feed-Back Capacitance

0.25

0.8

pF

Insertion Power Gain

13

15

dB

Maximum Available Gain

MAG

17

dB

Noise Figure

NF

1.2

2.0

dB

Class

R36/RCF *

R37/RCG *

R38/RCH *

Marking

R36

R37

R38

50 to 100

80 to 160

125 to 250

* Old Specification / New Specification

PACKAGE DIMENSIONS

(Units: mm)

PIN CONNECTIONS

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

5

°

5

°

5

°

5

°

2.8

+0.2

−0.3

1.5

+0.2

−0.1

JEITA

Part No.