2SC3356 datasheet(5/9 Pages) CEL

Part #	2SC3356

Description	NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

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Manufacturer	CEL [California Eastern Labs]

Direct Link	http://www.cel.com

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5 / 9 page

NE85633 / 2SC3356

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Jun 28, 2011

SMITH CHART

S21e-FREQUENCY

CONDITION : VCE = 10 V, IC = 20 mA

90˚

0˚

30˚

–30˚

60˚

–60˚

180˚

150˚

–150˚

120˚

–120˚

–90˚

5

10

15

20

S21e

0.2 GHz

2.0 GHz

S12e-FREQUENCY

CONDITION : VCE = 10 V, IC = 20 mA

90˚

0˚

30˚

–30˚

60˚

–60˚

180˚

150˚

–150˚

120˚

–120˚

–90˚

0.05 0.1 0.15 0.2 0.25

S12e

0.2 GHz

2.0 GHz

S11e, S22e-FREQUENCY

CONDITION : VCE = 10 V, 200 MHz Step

60

50

70

80

90

100

110

120

130

0.18

0.16

0.14

0.12

0.10

0.08

0.17

0.15

0.13

0.11

0.09

0.07

0.32

0.34

0.36

0.38

0.40

0.42

0.33

0.35

0.37

0.39

0.41

0.43

REACTANCE COMPONENT

( R––––Z

O

)

ENT

0.3

0.2

0.1

0.4

50

10

6.0

4.0

3.0

20

0.2 GHz

2.0 GHz

0.2 GHz

IC = 20 mA

S22e

S11e

IC = 20 mA

IC = 5 mA

0.2

0.4

0.6

0.8

1.0

0.2

0.8

0.6

0.4

A Business Partner of Renesas Electronics Corporation.

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2SC3356 Datasheet(PDF) 5 Page - California Eastern Labs

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