1N4150 datasheet(1/2 Pages) SUNMATE

Part #	1N4150

Description	200mA Axial Leaded Fast Switching Diode

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Manufacturer	SUNMATE [SUNMATE electronic Co., LTD]

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200mA Axial Leaded Fast Switching Diode

1N4150

1 of 2

Features

·

@ TA = 25

°C unless otherwise specified

Features

·

Mechanical Data

A

B

C

D

DO-35

Dim

Min

Max

A

25.40

¾

B

¾

4.00

C

¾

0.60

D

¾

2.00

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

·

Case: DO-35 Glass Case

Weight: approx. 0.13g

High switching speed: max. 4 ns

Continuous reverse voltage:max. 50 V

Repetitive peak reverse voltage:max. 75 V

Repetitive peak forward current: max. 600 mA

Pb / RoHS Free

Symbol

Value

Unit

VRRM

75

V

VRM

50

V

Maximum Continuous Forward Current

IF

200

mA

Maximum Power Dissipation

PD

500

mW

Maximum Repetitive Peak Forward Current

IFRM

600

mA

Maximum Surge Forward Current at t = 1s , Tj = 25

°C

IFSM

0.5

A

Maximum Junction Temperature

TJ

200

°C

Storage Temperature Range

TS

-65 to + 200

°C

Parameter

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

IR

VR = 50 V

-

0.1

µA

VR = 50 V , Tj = 150 °C

-

100

µA

IF = 100 mA

-

0.92

IF = 200 mA

-

1.0

Diode Capacitance

Cd

-

2.5

pF

IF = 10 mA to 200 mA

to IR = 10 mA to 200 mA;

RL = 100 Ω ; measured

at IR = 0.1x IF

V

Test Condition

VF

f = 1MHz ; VR = 0

Reverse Recovery Time

Trr

ns

4

-

Reverse Current

Forward Voltage

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