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RLP1N06CLE Datasheet(PDF) 7 Page - Intersil Corporation |
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RLP1N06CLE Datasheet(HTML) 7 Page - Intersil Corporation |
7 / 7 page 6-434 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 device, like most Power MOSFET devices today, is limited to 175oC. The maximum voltage allowable can, therefore be expressed as: Duty Cycle Operation of the RLP1N06CLE In many applications either the drain to source voltage or the gate drive is not available 100% of the time. The copper header on which the RLP1N06CLE is mounted has a very large thermal storage capability, so for pulse widths of less than 100 milliseconds, the temperature of the header can be considered a constant case temperature calculated simply as: Generally the heat storage capability of the silicon chip in a power transistor is ignored for duty cycle calculations. Making this assumption, limiting junction temperature to 175oC and using the TC calculated above, the expression for maximum VDS under duty cycle operation is: These values are plotted as Figures 12 thru 16. Limited Time Operations of the RLP1N06CLE Protection for a limited period of time is sufficient for many applications. As stated above the heat storage in the silicon chip can usually be ignored for computations of over 10 milliseconds and the thermal equivalent circuit reduces to a simple enough circuit to allow easy computation on the limiting conditions. The variation in limiting current with temperature complicates the calculation of junction temperature, but a simple straight line approximation of the variation is accurate enough to allow meaningful computations. The curves shown as figures 17 thru 21 give an accurate indication of how long the specified voltage can be applied to the device in the current limiting mode without exceeding the maximum specified 175oC junction temperature. In practice this tells you how long you have to alleviate the condition causing the current limiting to occur. V DS 175 o CT AMBIENT – () I LIM RθJC RθCA + () × ---------------------------------------------------------- = (EQ. 1) T C V DS I D DRθCA × × × () T AMBIENT + = (EQ. 2) V DS 175 T C – I LIM DRθJC × × ------------------------------------------ = (EQ. 3) RLP1N06CLE |
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