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NCE70R2K2I Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE70R2K2I Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 8 page  Wuxi NCE Power Semiconductor Co., Ltd Page http://www.ncepower.com v1.0 2 NCE70R2K2I，NCE70R2K2K Parameter Symbol Value Unit Drain Source voltage slope, VDS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt 15 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55...+150 °C Table 2. Thermal Characteristic Parameter Symbol Value Unit Thermal Resistance，Junction-to-Case（Maximum） RthJC 5.4 °C /W Thermal Resistance，Junction-to-Ambient （Maximum） RthJA 75 °C /W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 700 V Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=700V,VGS=0V 1 μA Zero Gate Voltage Drain Current(Tc=125℃) IDSS VDS=700V,VGS=0V 10 μA Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2.5 3 3.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1A 2200 2500 mΩ Dynamic Characteristics Forward Transconductance gFS VDS = 20V, ID = 1A 2 S Input Capacitance Clss 190 PF Output Capacitance Coss 13 PF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz 1.1 PF Total Gate Charge Qg 3.2 10 nC Gate-Source Charge Qgs 0.6 nC Gate-Drain Charge Qgd VDS=480V,ID=2A, VGS=10V 1.2 nC Intrinsic gate resistance RG f = 1 MHz open drain 9 Ω Switching times Turn-on Delay Time td(on) 6 nS Turn-on Rise Time tr 3 nS Turn-Off Delay Time td(off) 65 nS Turn-Off Fall Time tf VDD=380V,ID=1A, RG=50Ω,VGS=10V 11 nS Source- Drain Diode Characteristics Source-drain current(Body Diode) ISD 2 A Pulsed Source-drain current(Body Diode) ISDM TC=25°C 6 A Forward On Voltage VSD Tj=25°C,ISD=2A,VGS=0V 1 1.3 V Reverse Recovery Time trr 140 nS Reverse Recovery Charge Qrr 0.65 uC Peak reverse recovery current Irrm Tj=25°C,IF=2A,di/dt=100A/μs 9 A Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω |
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