RFP6P08 datasheet(2/5 Pages) INTERSIL

Part #	RFP6P08

Description	-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFP6P08

RFP6P10

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

80

100

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

80

100

V

Continuous Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

66

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

20

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

60

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.48

W/oC

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V

RFP6P08

-80

-

V

RFP6P10

-100

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA (Figure 7)

-2

-

-4

V

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS

--

1

µA

VDS = 0.8 x Rated BVDSS (TC = 125

oC)

-

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 6A, VGS = -10V (Figures 5, 6)

-

0.6

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 6A, VGS = -10V

-

-3.6

V

Turn-On Delay Time

td(ON)

VDD = 50V, ID ≈ 6A

RG = 50Ω, RL = 16Ω

VGS = -10V

(Figures 13, 14)

-11

60

ns

Rise Time

tr

-

48

100

ns

Turn-Off Delay Time

td(OFF)

-

102

150

ns

Fall Time

tf

-

70

100

ns

Input Capacitance

CISS

VDS = 25V

VGS = 0V

f = 1MHz

(Figure 8)

-

800

pF

Output Capacitance

COSS

-

350

pF

Reverse-Transfer Capacitance

CRSS

-

150

pF

Thermal Resistance Junction to Case

RθJC

RFP6P08, RFP6P10

-

2.083

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = -3A

-

-1.4

V

Reverse Recovery Time

trr

ISD = 4A, dlSD/dt = 50A/µs

-

150

-

ns

NOTES:

2. Pulse Test: Pulse Duration

≤ 300µs max, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

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