RFP18N10 datasheet(3/5 Pages) INTERSIL

Part #	RFP18N10

Description	18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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5-3

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. SATURATION CHARACTERISTICS

FIGURE 5. TRANSFER CHARACTERISTICS

FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs

DRAIN CURRENT

0

50

100

150

0

TC, CASE TEMPERATURE (

oC)

0.2

0.4

0.6

0.8

1.0

1.2

25

50

75

100

125

150

TC, CASE TEMPERATURE (

oC)

20

18

16

14

12

10

8

6

4

2

0

RFP18N08,

RFP18N10

RFM18N08,

RFM18N10

1

10

100

1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

10

1

0.1

TC = 25

oC

CURVES MUST BE DERATED

LINEARLY WITH INCREASE

IN TEMPERATURE

OPERATION IN

THIS AREA MAY BE

LIMITED BY rDS(ON)

DC

OPERA

TION

TJ = MAX RATED

01

23

4

5

6

7

35

30

25

20

15

10

5

0

VDS, DRAIN TO SOURCE (V)

VG = 8V

8

VG = 7V

VG = 6V

VG = 5V

VG = 4V

VG = 10V

VG = 20V

PULSE DURATION = 80

µs

DUTY CYCLE

≤ 2%

TC = 25

oC

0

234

1

56789

10

VGS, GATE TO SOURCE VOLTAGE (V)

40

35

30

25

20

15

10

5

0

VDS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE

≤ 2%

TC = 25

oC

125oC

-40oC

25oC

-40oC

010

20

30

35

515

25

ID, DRAIN CURRENT (A)

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0

PULSE DURATION = 80

µs

DUTY CYCLE

≤ 2%

TC = 25

oC

125oC

25oC

-40oC

VGS = 10V

RFM18N08, RFM18N10, RFP18N08, RFP18N10

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