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RFK25N20 Datasheet(PDF) 1 Page - Intersil Corporation |
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RFK25N20 Datasheet(HTML) 1 Page - Intersil Corporation |
1 / 5 page 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFK25N18, RFK25N20 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Features • 25A, 180V and 200V •rDS(ON) = 0.150Ω Symbol Packaging JEDEC TO-204AE Ordering Information PART NUMBER PACKAGE BRAND RFK25N18 TO-204AE RFK25N18 RFK25N20 TO-204AE RFK25N20 NOTE: When ordering, use the entire part number. G D S DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) October 1998 File Number 1500.3 Data Sheet |
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