1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

RFK25N18, RFK25N20

25A, 180V and 200V, 0.150 Ohm,

N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09594.

Features

• 25A, 180V and 200V

Symbol

Packaging

JEDEC TO-204AE

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFK25N18

TO-204AE

RFK25N18

RFK25N20

TO-204AE

RFK25N20

NOTE: When ordering, use the entire part number.

G

D

S

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

October 1998

File Number

1500.3

Data Sheet