RFK25N18 datasheet(2/5 Pages) INTERSIL

Part #	RFK25N18

Description	25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFK25N18

RFK25N20

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

180

200

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR

180

200

V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

25

A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

60

A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

150

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . TL

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0

RFK25N18

180

-

V

RFK25N20

200

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2-4

V

Zero Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

-

1

µA

VDS = 0.8 x Rated BVDSS,VGS = 0V, TC = 125

oC-

-

25

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V, VDS = 0V

-

±100

nA

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 25A, VGS = 10V (Figures 6, 7)

-

0.150

Ω

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 25A, VGS = 10V

-

3.75

V

Turn On Delay Time

td(ON)

ID ≈ 12.5A, VDD = 100V, RG = 50 , VGS = 10V

RL = 8 ,

(Figures 10, 11, 12)

-40

80

ns

Rise Time

tr

-

150

225

ns

Turn-Off Delay Time

td(OFF)

-

300

400

ns

Fall Time

tf

-

120

200

ns

Input Capacitance

CISS

VGS = 0V, VDS = 25V

f = 1MHz

(Figure 9)

-

3500

pF

Output Capacitance

COSS

-

900

pF

Reverse Transfer Capacitance

CRSS

-

400

pF

Thermal Resistance Junction to Case

R

θJC

-

0.83

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 12.5A

-

1.4

V

Diode Reverse Recovery Time

trr

ISD = 4A, dISD/dt = 100A/µs

-

300

-

ns

NOTES:

2. Pulse test: pulse width

≤ 300µs Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

RFK25N18, RFK25N20

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