Electronic Components Datasheet Search |
|
RFK25N18 Datasheet(PDF) 2 Page - Intersil Corporation |
|
RFK25N18 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 5 page 2 Absolute Maximum Ratings TC = 25 oC, Unless Otherwise Specified RFK25N18 RFK25N20 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 180 200 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . VDGR 180 200 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 25 25 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 60 60 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 150 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 1.2 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . TL 260 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25 oC to 125oC. Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 RFK25N18 180 - - V RFK25N20 200 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2-4 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS,VGS = 0V, TC = 125 oC- - 25 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 nA Drain to Source On Resistance (Note 2) rDS(ON) ID = 25A, VGS = 10V (Figures 6, 7) - - 0.150 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 25A, VGS = 10V - - 3.75 V Turn On Delay Time td(ON) ID ≈ 12.5A, VDD = 100V, RG = 50 , VGS = 10V RL = 8 , (Figures 10, 11, 12) -40 80 ns Rise Time tr - 150 225 ns Turn-Off Delay Time td(OFF) - 300 400 ns Fall Time tf - 120 200 ns Input Capacitance CISS VGS = 0V, VDS = 25V f = 1MHz (Figure 9) - - 3500 pF Output Capacitance COSS - - 900 pF Reverse Transfer Capacitance CRSS - - 400 pF Thermal Resistance Junction to Case R θJC - - 0.83 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage (Note 2) VSD ISD = 12.5A - - 1.4 V Diode Reverse Recovery Time trr ISD = 4A, dISD/dt = 100A/µs - 300 - ns NOTES: 2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFK25N18, RFK25N20 |
Similar Part No. - RFK25N18 |
|
Similar Description - RFK25N18 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |