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RQK0201QGDQA Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQK0201QGDQA Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page R07DS0301EJ0500 Rev.5.00 Page 1 of 7 Jan 10, 2014 Preliminary Datasheet RQK0201QGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 25 m Ω typ (V GS = 4.5 V, ID = 2.4 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 1 3 1 2 3 Note: Marking is “QG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12 V Drain current ID 4.5 A Drain peak current ID(pulse) Note1 15 A Body - drain diode reverse drain current IDR 4.5 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0301EJ0500 Rev.5.00 Jan 10, 2014 |
Similar Part No. - RQK0201QGDQA_15 |
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