RFD4N06L datasheet(2/5 Pages) INTERSIL

Part #	RFD4N06L

Description	4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

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Manufacturer	INTERSIL [Intersil Corporation]

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2 / 5 page

6-190

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD4N06L

RFD4N06LSM

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

60

V

Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

4A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

10

A

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30

0.20

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

60

-

V

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

1

-

2.5

V

Zero Gate Voltage Drain Current

IDSS

TC = 25

oC, V

DS = 50V, VGS = 0V

-

1

µA

TC = 125

oC, V

DS = 50V, VGS = 0V

-

50

µA

Gate to Source Leakage Current

IGSS

VGS = 10V, VDS = 0V

-

100

nA

Drain to Source On Voltage (Note 2)

VDS(ON)

ID = 1A, VGS = 5V

-

0.8

V

ID = 2A, VGS = 5V

-

2.0

V

ID = 4A, VGS = 7.5V

-

4.0

V

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 1A, VGS = 5V

-

0.600

Ω

Forward Transconductance (Note 2)

V(plateau) VDS = 15V, ID = 4A

-

4.5

V

Turn-On Delay Time

td(ON)

VDD = 30V, ID = 1A, RGS = 6.25Ω,

VGS = 5V

-

20

ns

Rise Time

tr

-

130

ns

Turn-Off Delay Time

td(OFF)

-

40

ns

Fall Time

tf

-

160

ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 0-10V

VDD = 48V,

ID = 2A,

RL = 24Ω

--

8

nC

Gate Charge at 5V

Qg(5)

VGS = 0-5V

-

5

nC

Threshold Gate Charge

Qg(TH)

VGS = 0-1V

-

1

nC

Thermal Resistance Junction to Case

RθJC

--

5

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage (Note 2)

VSD

ISD = 1A

-

1.4

V

Reverse Recovery Time

trr

ISD = 2A, dISD/dt = 100A/µs

-

150

-

ns

NOTES:

2. Pulsed: pulse duration = 300

µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

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