6-163

File Number

2269.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

RFD16N05L, RFD16N05LSM

16A, 50V, 0.047 Ohm, Logic Level,

N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor relay

drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate biases

in the 3V to 5V range, thereby facilitating true on-off power

control directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Features

• 16A, 50V

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD16N05L

TO-251AA

RFD16N05L

RFD16N05LSM

TO-252AA

RFD16N05LSM

NOTE: When ordering, include the entire part number. Add the suffix 9A

to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A

G

D

S

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet

April 1999