RJK0455DPB_15 datasheet(2/7 Pages) RENESAS

Part #	RJK0455DPB

Description	40V, 45A, 3.8m??max. Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK0455DPB

Preliminary

R07DS1050EJ0300 Rev.3.00

Page 2 of 6

Apr 09, 2013

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

40

—

V

ID = 10 mA, VGS = 0 V

Gate to source leak current

IGSS

—

0.1

A

VGS = 20 V, VDS = 0 V

Zero gate voltage drain current

IDSS

—

1

A

VDS = 40 V, VGS = 0 V

Gate to source cutoff voltage

VGS(off)

2.0

—

4.0

V

VDS = 10 V, ID = 1 mA

Static drain to source on state resistance

RDS(on)

—

3.1

3.8

m



ID = 22.5 A, VGS = 10 V

Note4

Forward transfer admittance

|yfs|

—

52

—

S

ID = 22.5 A, VDS = 10 V

Note4

Input capacitance

Ciss

—

2550

—

pF

Output capacitance

Coss

—

760

—

pF

Reverse transfer capacitance

Crss

—

210

—

pF

VDS = 10 V, VGS = 0 V,

f = 1 MHz

Gate Resistance

Rg

—

0.5

—



Total gate charge

Qg

—

34

—

nC

Gate to source charge

Qgs

—

11

—

nC

Gate to drain charge

Qgd

—

4.5

—

nC

VDD = 10 V, VGS = 10 V,

ID = 45 A

Turn-on delay time

td(on)

—

12

—

ns

Rise time

tr

—

6.0

—

ns

Turn-off delay time

td(off)

—

32

—

ns

Fall time

tf

—

7.2

—

ns

VGS = 10 V, ID = 22.5 A,

VDD  10 V, RL = 0.4 ,

Rg = 4.7



Body–drain diode forward voltage

VDF

—

0.8

1.1

V

IF = 45 A, VGS = 0 V

Note4

Body–drain diode reverse recovery time

trr

—

39

—

ns

IF = 45 A, VGS = 0 V

diF/ dt = 100 A/ s

Notes: 4. Pulse test

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