NE5550979A-T1 datasheet(4/13 Pages) RENESAS

Part #	NE5550979A-T1

Description	Silicon Power LDMOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 13 page

NE5550979A

R09DS0031EJ0300 Rev.3.00

Page 4 of 11

Mar 12, 2013

TYPICAL CHARACTERISTICS 1 (TA = 25

°C)

R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm

IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm

add

- 3.6 V

add

- 6.0 V

add

- 4.5 V

add

- 9 V

add

- 7.5 V

2 Tones Output Power Pout (2 tone) (dBm)

IM3/IM5 vs. 2 TONES OUTPUT POWER

Output Power Pout (dBm)

2f0, 3f0 vs. OUTPUT POWER

Pout - 3.6 V

Pout - 4.5 V

Pout - 6.0 V

Pout - 7.5 V

Pout - 9 V

IDS - 3.6 V

IDS - 6.0 V

IDS - 4.5 V

IDS - 9 V

IDS - 7.5 V

Input Power Pin (dBm)

OUTPUT POWER, DRAIN CURRENT

vs. INPUT POWER

0

0.0

50

5.0

45

4.5

40

4.0

35

3.5

30

3.0

25

2.5

20

2.0

15

1.5

10

1.0

5

0.5

35

30

20

15

10

–5

05

25

Input Power Pin (dBm)

POWER GAIN, POWER ADDED

EFFICIENCY vs. INPUT POWER

Gp - 3.6 V

Gp - 4.5 V

Gp - 6 V

Gp - 7.5 V

Gp - 9 V

00

40

80

35

70

30

60

25

50

20

40

15

30

10

20

510

35

30

20

15

10

–5

05

25

2f0 - 3.6 V

2f0 - 4.5 V

2f0 - 6.0 V

2f0 - 7.5 V

3f0 - 3.6 V

3f0 - 4.5 V

3f0 - 7.5 V

3f0 - 6.0 V

3f0 - 9 V

2f0 - 9 V

–70

0

–10

–20

–30

–40

–50

–60

45

35

30

25

10

15

20

40

IM3 - 3.6 V

IM3 - 4.5 V

IM3 - 6 V

IM3 - 7.5 V

IM5 - 3.6 V

IM5 - 4.5 V

IM5 - 7.5 V

IM5 - 6.0 V

IM5 - 9 V

IM3 - 9 V

–70

0

–10

–20

–30

–40

–50

–60

40

35

30

25

10

15

20

η

Remark The graphs indicate nominal characteristics.

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