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MWS5114E2 Datasheet(PDF) 6 Page - Intersil Corporation |
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MWS5114E2 Datasheet(HTML) 6 Page - Intersil Corporation |
6 / 7 page 6-165 NOTE: 1. WE is high during the Read Cycle. Timing measurement reference level is 1.5V. FIGURE 1. READ CYCLE TIMING WAVEFORMS NOTE: 1. WE is low during the Write Cycle. Timing measurement reference level is 1.5V. FIGURE 2. WRITE CYCLE TIMING WAVEFORMS ADDRESS tRC tAA VALID ACTIVE DOUT CS tCX tCO tOTD tOHA tWC ADDRESS CS tACS tWR tW tAW DON’T CARE VALID tDSU tDH WE DIN Data Retention Specifications at TA = 0oC to +70oC; See Figure 3 PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS VDR (V) VDD (V) ALL TYPES MIN (NOTE 1) TYP MAX Minimum Data Retention Voltage VDR - - 2 - - V Data Retention Quiescent Current MWS5114-3 IDD 2 - - 25 50 µA MWS5114-2 2 - - 25 50 µA MWS5114-1 2 - - 60 125 µA Chip Deselect to Data Retention Time tCDR - 5 300 - - ns Recovery to Normal Operation Time tRC - 5 300 - - ns VDD to VDR Rise and Fall Time tR, tF 251 - - µs NOTE: 1. Typical Values are for TA = 25 oC and nominal V DD. MWS5114 |
Similar Part No. - MWS5114E2 |
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Similar Description - MWS5114E2 |
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