HITJ0204MP_15 datasheet(1/7 Pages) RENESAS

Part #	HITJ0204MP

Description	??0V, ??.6A, 280m?뾪ax Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0476EJ0200 Rev.2.00

Page 1 of 6

May 09, 2013

Preliminary Datasheet

HITJ0204MP

–20V, –1.6A, 280m

max.

Silicon P Channel MOS FET

Power Switching

Features

 Low on-resistance

RDS(on) = 219 m typ (VGS = –4.5 V, ID = –0.8 A)

 Low drive current

 High speed switching

 2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

S

D

G

2

1

3

1

2

3

Note:

Marking is “XV”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

–20

V

Gate to source voltage

VGSS

+8 / –12

V

Drain current

ID

–1.6

A

Drain peak current

ID(pulse)

Note1

–4.0

A

Body - drain diode reverse drain current

IDR

–1.6

A

Channel dissipation

Pch

Note2

0.8

W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

R07DS0476EJ0200

Rev.2.00

May 09, 2013

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