HITJ0302MP_15 datasheet(5/7 Pages) RENESAS

Part #	HITJ0302MP

Description	??0V, ??.2A, 173m?뾪ax Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 7 page

HITJ0302MP

Preliminary

R07DS0477EJ0200 Rev.2.00

Page 5 of 6

May 09, 2013

Dynamic Input Characteristics

Gate Charge Qg (nC)

Switching Characteristics

Drain Current ID (A)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Input Capacitance vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Reverse Drain Current vs.

Source to Drain Voltage

Source to Drain Voltage VSD (V)

Body-Drain Diode Forward Voltage vs.

Case Temperature

Case Temperature Tc (

°C)

01

2

3

4

5

0

–

20

–

40

–

80

–

60

0

-4

-8

-12

-16

0

–

10

–

20

–

30

10

100

1000

200

360

–10

–5

0

5

10

0

–

0.8

–

0.4

–

1.2

–

1.6

–

2.0

–

0.6

–

1.0

–

0.8

–

0.4

–

0.2

0

–

0.3

–

0.4

–

0.5

–

0.8

–

0.6

–

0.7

–

0.2

25

50

75

100

125

150

ID = –2.2 A

Tc = 25°C

–

10 V

VDD = –10 V

–

25 V

Pulse Test

Tc = 25°C

VGS = –10 V

–5 V

–

1 mA

ID = –10 mA

VGS = 0

6

VGS = 0 V, 5 V

–

100

-20

Crss

Coss

VGS = 0 V

f = 1 MHz

Ciss

280

320

240

VDS = 0 V

f = 1 MHz

VDD = –25 V

VGS

VDS

1

10

100

1000

–

0.01

–

0.1

–

1

–

10

VDD = –10 V

VGS = –10 V

Rg = 4.7

Ω

PW = 5

μs

Tc = 25°C

td(on)

td(off)

tf

tr

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