HITJ0302MP_15 datasheet(4/7 Pages) RENESAS

Part #	HITJ0302MP

Description	??0V, ??.2A, 173m?뾪ax Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

HITJ0302MP

Preliminary

R07DS0477EJ0200 Rev.2.00

Page 4 of 6

May 09, 2013

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance

vs. Drain Current

Drain Current ID (A)

Static Drain to Source on State Resistance

vs. Case Temperature

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Case Temperature

Case Temperature Tc (

°C)

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Zero Gate Voltage Drain current vs.

Case Temperature

Case Temperature Tc (

°C)

0

–

0.2

–

0.4

–

0.6

0

–

4

–

8

–

12

–

16

–

20

0.01

0.03

0.1

0.3

1.0

–

0.1

–

1.0

–

0.3

–

3

–

10

–25

0

25

50

75

100

125 150

–

0.2 A

–25

0

25

50

75

100 125

150

0.1

1

0.3

10

3

–

0.1

–

1

–

0.3

–

1

–

10

–

100

–

1000

–25

0

25

50

75

100 125 150

50

100

150

200

250

300

350

400

–

0.5 A

ID = –1 A

Pulse Test

VGS = –4.5 V

50

100

150

200

250

300

ID = –1 A

Pulse Test

VGS = –10 V

–

0.5 A

–

0.2 A

–

0.5 A

–

0.2 A

VDS = –4.5 V

Pulse Test

Tc = 25

°C

–

10 V

–

0.8

–25

°C

Tc = 75

°C

25

°C

Pulse Test

VDS = –10 V

Pulse Test

VGS = 0 V

VDS = –30 V

Pulse Test

Tc = 25

°C

–

1.0 A

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