JANSR2N7401 datasheet(2/8 Pages) INTERSIL

Part #	JANSR2N7401

Description	6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET

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Manufacturer	INTERSIL [Intersil Corporation]

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4-2

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

JANSR2N7401

UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

250

V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

250

V

Continuous Drain Current

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

6A

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

D

4A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

18

A

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±20

V

Maximum Power Dissipation

TC = 25

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T

50

W

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T

20

W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.40

W/oC

Single Pulsed Avalanche Current, L = 100

µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS

18

A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

6A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

18

A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical)

300

__

oC

g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 1mA, VGS = 0V

250

-

V

Gate Threshold Voltage

VGS(TH)

VGS = VDS,

ID = 1mA

TC = -55

oC

-

5.0

V

TC = 25

oC

1.5

-

4.0

V

TC = 125

oC

0.5

-

V

Zero Gate Voltage Drain Current

IDSS

VDS = 200V,

VGS = 0V

TC = 25

oC-

-

25

µA

TC = 125

oC

-

250

µA

Gate to Source Leakage Current

IGSS

VGS = ±20V

TC = 25

oC

-

100

nA

TC = 125

oC

-

200

nA

Drain to Source On-State Voltage

VDS(ON)

VGS = 12V, ID = 6A

-

3.78

V

Drain to Source On Resistance

rDS(ON)12

ID = 4A,

VGS = 12V

TC = 25

oC

-

0.450

0.600

Ω

TC = 125

oC

-

1.08

Ω

Turn-On Delay Time

td(ON)

VDD = 125V, ID = 6A,

RL = 20.8Ω, VGS = 12V,

RGS = 7.5Ω

-

70

ns

Rise Time

tr

-

140

ns

Turn-Off Delay Time

td(OFF)

-

120

ns

Fall Time

tf

-

95

ns

Total Gate Charge (Not on slash sheet)

Qg(TOT)

VGS = 0V to 20V

VDD = 125V,

ID = 6A

-

62

nC

Gate Charge at 12V

Qg(12)

VGS = 0V to 12V

-

32

41

nC

Threshold Gate Charge (Not on slash sheet)

Qg(TH)

VGS = 0V to 2V

-

3.0

nC

Gate Charge Source

Qgs

-

7.3

11

nC

Gate Charge Drain

Qgd

-16

21

nC

Thermal Resistance Junction to Case

R

θJC

-

2.5

oC/W

Thermal Resistance Junction to Ambient

R

θJA

--

60

oC/W

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