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ISL6522A Datasheet(PDF) 7 Page - Intersil Corporation |
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ISL6522A Datasheet(HTML) 7 Page - Intersil Corporation |
7 / 13 page 7 FN9122.2 April 13, 2005 is reference to VIN. When the voltage across the upper MOSFET (also referenced to VIN) exceeds the voltage across ROCSET, the overcurrent function initiates a soft-start sequence. The soft-start function discharges CSS with a 10 µA current sink and inhibits PWM operation. The soft-start function recharges CSS, and PWM operation resumes with the error amplifier clamped to the SS voltage. Should an overload occur while recharging CSS, the soft-start function inhibits PWM operation while fully charging CSS to 4V to complete its cycle. Figure 4 shows this operation with an overload condition. Note that the inductor current increases to over 15A during the CSS charging interval and causes an overcurrent trip. The converter dissipates very little power with this method. The measured input power for the conditions of Figure 4 is 2.5W. The overcurrent function will trip at a peak inductor current (IPEAK) determined by: where IOCSET is the internal OCSET current source (200µA is typical). The OC trip point varies mainly due to the MOSFETs rDS(ON) variations. To avoid overcurrent tripping in the normal operating load range, find the ROCSET resistor from the equation above with: The maximum rDS(ON) at the highest junction temperature. 1. The minimum IOCSET from the specification table. 2. Determine , where ∆I is the output inductor ripple current. For an equation for the ripple current see the section under component guidelines titled Output Inductor Selection. A small ceramic capacitor should be placed in parallel with ROCSET to smooth the voltage across ROCSET in the presence of switching noise on the input voltage. Current Sinking The ISL6522A incorporates a MOSFET shoot-through protection method which allows a converter to sink current as well as source current. Care should be exercised when designing a converter with the ISL6522A when it is known that the converter may sink current. When the converter is sinking current, it is behaving as a boost converter that is regulating its input voltage. This means that the converter is boosting current into the VIN rail, the voltage that is being down-converted. If there is nowhere for this current to go, such as to other distributed loads on the VIN rail, through a voltage limiting protection device, or other methods, the capacitance on the VIN bus will absorb the current. This situation will cause the voltage level of the VIN rail to increase. If the voltage level of the rail is boosted to a level that exceeds the maximum voltage rating of the MOSFETs or the input capacitors, damage may occur to these parts. If the bias voltage for the ISL6522A comes from the VIN rail, then the maximum voltage rating of the ISL6522A may be exceeded and the IC will experience a catastrophic failure and the converter will no longer be operational. Ensuring that there is a path for the current to follow other than the capacitance on the rail will prevent these failure modes. Application Guidelines Layout Considerations As in any high frequency switching converter, layout is very important. Switching current from one power device to another can generate voltage transients across the impedances of the interconnecting bond wires and circuit traces. These interconnecting impedances should be minimized by using wide, short printed circuit traces. The critical components should be located as close together as possible using ground plane construction or single point grounding. Figure 5 shows the critical power components of the converter. To minimize the voltage overshoot the interconnecting wires indicated by heavy lines should be part of ground or power plane in a printed circuit board. The components shown in Figure 6 should be located as close together as possible. Please note that the capacitors CIN and CO each represent numerous physical capacitors. Locate the ISL6522A within three inches of the MOSFETs, Q1 and Q2. The circuit traces for the MOSFETs’ gate and source connections from the ISL6522A must be sized to handle up to 1A peak current. Figure 6 shows the circuit traces that require additional layout consideration. Use single point and ground plane construction for the circuits shown. Minimize any leakage current paths on the SS PIN and locate the capacitor, CSS close to the SS pin because the internal current source is only 10 µA. Provide local VCC decoupling between VCC and GND pins. Locate the capacitor, CBOOT as close as practical to the BOOT and PHASE pins. IPEAK IOCSET ROCSET • rDS ON () --------------------------------------------------- = IPEAK for IPEAK IOUT MAX () ∆I () 2 ⁄ + > PGND LO CO LGATE UGATE PHASE Q1 Q2 D2 FIGURE 5. PRINTED CIRCUIT BOARD POWER AND GROUND PLANES OR ISLANDS VIN VOUT RETURN ISL6522A CIN ISL6522A |
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